View AN858_5785003.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

scr's and triacs dice january 1995
codification new codification jcm w i t(rms) v drm x 1/10 metallization delivery form junction function triac = c scr = t technology mesa = m planar = p topglass= t sensitivity technic code 2 4 5 6 9 10 mesa planar topglass topglass niau pbsn pbsnag al al al niau pbsn (183 c) pbsnag (300 c) au niag alniau front side back side a uns cribe d wafer, t e sted, d efect s inke d. ele ct rica lly s orte d an d c hi ps deliv ered in waf fle p ac k. chip s elect rica lly an d v isu ally so rt ed an d d eliv ered in waff le p ac k. cut waf er, d ic e o n fra me . cut waf er, d ic e o n ring e xpanded. ab e v f triac 3q = w sensitive scr = l triac 4q = standard scr= 1/21
wafer manufacturing (diffusion, metallization) qa gate dice separation 100% electrical test 100% visual inspection chips delivered in compartment box e v delivery form qa inspection code chips visually sorted delivered in compartment box mesa technology manufacturing flow chart subgroup sampling level aql visual / mechanical ii 0.40 electrical at 25 c ii 0.40 qa inspection is done through sampling for all batches : 2/21
planar and topglass technologies a ab f code wafer manufacturing (diffusion,metallization) qa gate dice separation 100% electrical test qa inspection prefered delivery form non cut wafer defective items inked expanded wafer on standard ring pair, defective items inked non expanded wafer on frame defective items inked delivery form manufacturing flow chart subgroup sampling level aql visual / mechanical ii 0.40 electrical at 25 c ii 0.40 qa inspection is done through sampling for all batches : 3/21
n n n n n p p glass metallization cathode gate anode metallization mesa technology technology n metalli za tion n p p p cathode gate oxyde oxyde anode met alli za tion planar technology cathode metallization glass pnp n n n+ n gate anode metallization topglass technology 4/21
6+0.1/-0 o186mm o 170mm drawing ring pair (ab code) 5/21
cover 508 mm holes compartmented tray cover antistatic paper drawing compartment box (v, e code) 60.20 63.50 43.29 43.29 30 60 60 212.00 f 194.00 f 229.00 85.70 212.00 85.70 frame (f code) - dimensions in milimeters 6/21
200 400 600 800 1000 200 400 600 note : leakage currents are specified at 50 lux max luminous intensity and at 60% hr max. for types with v drm / v rrm = 1000 v, i drm /i rrm are specified on coated chips. v drm =v rrm (v) i t(rms) (a) 4 jct-04 jctw04 8 jctw08 12 jctw12 16 jctw16 20 jctw20 technology : topglass technology : mesaglass v drm =v rrm (v) i t(ms) (a) 8 jcm-08 jcmw08 10 jcm-10 jcmw10 12 jcm-12 jcmw12 16 jcm-16 jcmw16 25 jcm-25 jcmw25 40 jcm-40 jcmw40 60 jcm-60 jcmw60 triacs 7/21
100 200 400 600 800 1000 1200 200 400 600 v drm =v rrm (v) i t(rms) (a) 3 jtml 03 4 jtm-04 10 jtm-10 16 jtm-16 20 jtm-20 30 jtm-30 45 jtm-45 70 jtm-70 note : leakage currents are specified at 50 lux max luminous intensity and at 60% hr max. for types with v drm /v rrm = 1000 v, i drm /i rrm are specified on coated chips. v drm =v rrm (v) i t(rms) (a) 1 jtpl01 2 jttl02 4 jttl04 technology : planar / topglass technology : mesaglass scr's 8/21
v drm i tsm i gt v tm @i tm dv/dt (di/dt)c dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) qi qii qiii qiv (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) typ t j = 125 c (a/ms) thick. dim. metal. m m (mm) d1xd2 i t(rms) :8a i drm /i rrm =10 m a max t j =25 c jcm-08-020 jcm-08-040 jcm-08-060 jcm-08-080 200 400 600 800 80 50 50 50 100 1.8 11 100 4.5 200-600 3x3 2*-4-5 see metalli. i t(rms) : 10a i drm /i rrm =10 m a max t j =25 c jcm-10-020 jcm-10-040 jcm-10-060 jcm-10-080 200 400 600 800 100 50 50 50 100 1.7 14 100 5.5 200-600 3.3x3.3 2*-4-5 see metalli. i t(rms) : 12a i drm /i rrm =10 m a max t j =25 c jcm-12-020 jcm-12-040 jcm-12-060 jcm-12-080 200 400 600 800 120 50 50 50 100 1.7 17 100 6.5 200-600 3.5x3.5 2*-4-5 see metalli. i t(rms) : 16a i drm /i rrm =10 m a max t j =25 c jcm-16-020 jcm-16-040 jcm-16-060 jcm-16-080 200 400 600 800 160 50 50 50 100 1.8 22.5 200 8.5 200-600 4x4 2*-4-5 see metalli. (1) : t j =25 c * = prefered technology mesa delivery form e v packaging xx base qty 3x3 3.3 x 3.3 3.5 x 3.5 4x4 500 pcs 500 pcs 500 pcs 320 pcs d2 d1 top view gate example : j cm - 08 - 060 - 2 e junction current i t (rms) delivery form metallization mesa standard triac (v drm )x1/10 triacs four quadrants 9/21
technology mesa delivery form e v packaging xx base qty 5.0 x 5.0 6.35 x 6.35 8.5 x 8.5 245 pcs 180 pcs 80 pcs d2 d1 top view gate v drm i tsm i gt v tm @i tm dv/dt (di/dt)c dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) qi qii qiii qiv (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) typ t j = 125 c (a/ms) thick. dim. metal. m m (mm) d1xd2 i t(rms) : 25a i drm /i rrm =20 m a max t j =25 c jcm-25-020 jcm-25-040 jcm-25-060 jcm-25-080 200 400 600 800 250 100 100 100 150 2 35 200 13.5 200-600 5.0x5.0 2*-4-5 see metal. i t(rms) : 40a i drm /i rrm =20 m a max t j =25 c jcm-40-020 jcm-40-040 jcm-40-060 jcm-40-080 200 400 600 800 300 100 100 100 150 2 60 200 21.5 200-600 6.35x6.35 2*-4-5 see metal. i t(rms) : 60a i drm /i rrm =20 m a max t j =25 c jcm-60-020 jcm-60-040 jcm-60-060 jcm-60-080 200 400 600 800 500 100 100 100 150 2 100 200 32 200-600 8.5x8.5 2-4-5* see metal. (1) : t j =25 c * = prefered example : j cm - 25 - 060 - 2 e junction current i t (rms) delivery form metallization mesa standard triac (v drm )x1/10 triacs four quadrants 10/21
v drm i tsm i gt v tm @i tm dv/dt (di/dt)c dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) qi qii qiii (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) typ t j = 125 c (a/ms) thick. dim. metal. m m (mm) d1xd2 i t(rms) :8a i drm /i rrm =10 m a max t j =25 c jcmw08-020 jcmw08-040 jcmw08-060 jcmw08-060 200 400 600 800 80 50 50 50 1.8 11 500 7 200-600 3.0x3.0 2*-4-5 see metal. i t(rms) : 10a i drm /i rrm =10 m a max t j =25 c jcmw10-020 jcmw10-040 jcmw10-060 jcmw10-060 200 400 600 800 100 50 50 50 1.75 14 500 9 200-600 3.3x3.3 2*-4-5 see metal. i t(rms) : 12a i drm /i rrm =10 m a max t j =25 c jcmw12-020 jcmw12-040 jcmw12-060 jcmw12-060 200 400 600 800 120 100 100 100 1.8 17 500 12 200-600 3.5x3.5 2*-4-5 see metal. i t(rms) : 16a i drm /i rrm =10 m a max t j =25 c jcmw16-020 jcmw16-040 jcmw16-060 jcmw16-060 200 400 600 800 160 100 100 100 1.7 22.5 500 14 200-600 4x4 2*-4-5 see metal. i t(rms) : 25a i drm /i rrm =20 m a max t j =25 c jcmw25-020 jcmw25-040 jcmw25-060 jcmw25-060 jcmw25-100 200 400 600 800 1000 250 150 150 150 2 35 500 25 200-600 5.0x5.0 2*-4-5 see metal. i t(rms) : 40a i drm /i rrm =20 m a max t j =25 c jcmw40-020 jcmw40-040 jcmw40-060 jcmw40-060 jcmw40-100 200 400 600 800 1000 300 150 150 150 2 60 500 40 200-600 6.35x6.35 2-4-5* see metal. i t(rms) : 60a i drm /i rrm =20 m a max t j =25 c jcmw60-020 jcmw60-040 jcmw60-060 jcmw60-060 jcmw60-100 200 400 600 800 1000 500 200 200 200 2 100 500 60 200-600 8.5x8.5 2-4-5* see metal. (1) : t j =25 c * = prefered three quadrants snubberless triacs 11/21
technology mesa delivery form e v packaging xx base qty 3.0 x 3.0 3.3 x 3.3 3.5 x 3.5 4.0 x 4.0 5.0 x 5.0 6.35 x 6.35 8.5 x 8.5 500 pcs 500 pcs 500 pcs 320 pcs 245 pcs 180 pcs 80 pcs base qty multiple of min qty and always 500 pcs d2 d1 top view gate three quadrants snubberless triacs example : j cmw 08 - 060 - 2 e junction current i t (rms) delivery form metallization mesa snubberless triac (v drm )x1/10 12/21
v drm i tsm i gt v tm @i tm dv/dt (di/dt)c dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) qi qii qiii qiv (ma) max (1) (v) (a) rgk = 1k w typ at 0.67xv drm t j =125 c (v/ m s) typ t j = 125 c (a/ms) thick. dim. metal. m m typ. (mm) d1xd2 i t(rms) :4a i drm /i rrm =10 m a max r gk =1k w t j =25 c jct-04-020 jct-04-040 jct-04-060 200 400 600 20 10 10 10 10 2 5.5 100 1.8 210 2x1.6 9 technology topglass delivery form aabf max qty per wafer ? 4o 2055 base unit of delivery 1 wafer d2 d1 top view gate example : j ct - 04 - 020 - 9 a junction current i t (rms) delivery form metallization topglass sensitive triac (v drm )x1/10 sensitive triacs four quadrants 13/21
v drm i tsm i gt v tm @i tm dv/dt (di/dt)c dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) qi qii qiii (ma) min (1) (2) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) typ t j = 125 c (a/ms thick. dim. metal. m m typ. (mm) d1xd2 i t(rms) :4a i drm /i rrm =10 m a max t j =25 c jctw04-040 jctw04-060 400 600 30 35 35 35 1.75 5.5 250 3.5 240 2.6x2.6 10 i t(rms) :8a i drm /i rrm =10 m a max t j =25 c jctw08-040 jctw08-060 400 600 60 35 35 35 1.75 11 250 9 240 3.2x3.2 10 i t(rms) : 12a i drm /i rrm =10 m a max t j =25 c jctw12-040 jctw12-060 400 600 100 3.5 35 35 1.60 17 250 13 240 3.75x3.75 10 i t(rms) : 16a i drm /i rrm =10 m a max t j =25 c jctw16-040 jctw16-060 400 600 120 35 35 35 1.60 22.5 250 17 240 4.2x4.2 10 i t(rms) : 20a i drm /i rrm =10 m a max t j =25 c jctw20-040 jctw20-060 400 600 160 35 35 35 1.70 28 250 22 240 4.5x4.5 10 (1) : t j =25 c technology topglass delivery form aabf max. qty per wafer ? 4o 2.6x2.6 3.2x3.2 3.75x3.75 4.2x4.2 4.5x4.5 984 648 466 363 312 base unit of delivery 1 wafer d2 d1 top view gate example : j ctw 12 - 040 - 10 a junction current i t (rms) delivery form metallization topglass snubberless triac (v drm )x1/10 three quadrants snubberless triacs 14/21
v drm i tsm i gt v tm @i tm dv/dt dice types = v rrm t j =110 c (v) max (1) t p =10ms (a) max (1) (ma) max (1) (v) (a) typ at 0.67xv drm t j =110 c (v/ m s) thick. dim. metal. m m (mm) d1xd2 i t(rms) :3a i drm /i rrm =10 m a max r gk =1k w t j =25 c jtml03-010 jtml03-020 jtml03-040 jtml03-060 100 200 400 600 30 0.2 1.8 6 10 200-600 2.54x1.8 4 see metal. (1) : t j =25 c technology mesa delivery form e v base qty 2.54 x 1.8 770 pcs example : j tml 03 - 010 - 4 e junction current i t (rms) delivery form metallization mesa sensiti ve scr's (v drm )x1/10 sensitive scr's 15/21
v drm i tsm i gt v tm @i tm dv/dt dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max (1) (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) thick. dim. metal. m m (mm) d1xd2 i t(rms) :4a i drm /i rrm =10 m a max t j =25 c jtm-04-020 jtm-04-040 jtm-04-060 jtm-04-080 200 400 600 800 40 25 1.8 8 100 200-600 2.6x2.6 2-4*-5 see metal. i t(rms) : 10a i drm /i rrm =10 m a max t j =25 c jtm-10-020 jtm-10-040 jtm-10-060 jtm-10-080 200 400 600 800 100 25 1.8 20 100 200-600 2.8x2.8 2*-4-5 see metal. i t(rms) : 16a i drm /i rrm =10 m a max t j =25 c jtm-16-020 jtm-16-040 jtm-16-060 jtm-16-080 jtm-16-100 jtm-16-120 200 400 600 800 1000 1200 160 25 1.8 32 100 200-600 3.5x3.5 2*-4-5 see metal. (1) : t j =25 c * = prefered technology mesa delivery form e v base qty 2.6 x 2.6 2.8 x 2.8 3.5 x 3.5 605 pcs 605 pcs 500 pcs d2 d1 top view gate example : j tm - 04 - 020 - 4 e junction current i t (rms) delivery form metallization mesa scr's (v drm )x1/10 standard scr's 16/21
v drm i tsm i gt v tm @i tm dv/dt dice types = v rrm t j =125 c (v) max (1) t p =10ms (a) max (1) (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) thick. dim. metal. m m (mm) d1xd2 i t(rms) :20a i drm /i rrm =10 m a max t j =25 c jtm-20-020 jtm-20-040 jtm-20-060 jtm-20-080 jtm-20-100 jtm-20-120 200 400 600 800 1000 1200 200 40 1.8 40 100 200-600 4.42x4.42 2*-4-5 see metal. i t(rms) :30a i drm /i rrm =20 m a max t j =25 c jtm-30-020 jtm-30-040 jtm-30-060 jtm-30-080 jtm-30-100 jtm-30-120 200 400 600 800 1000 1200 300 80 2 60 200 200-600 5.0x5.0 2*-4-5 see metal. i t(rms) :45a i drm /i rrm =20 m a max t j =25 c jtm-45-020 jtm-45-040 jtm-45-060 jtm-45-080 jtm-45-100 jtm-45-120 200 400 600 800 1000 1200 400 80 2 90 200 200-600 6.35x6.35 2-4-5* see metal. i t(rms) :70a i drm /i rrm =20 m a max t j =25 c jtm-70-020 jtm-70-040 jtm-70-060 jtm-70-080 jtm-70-100 jtm-70-120 200 400 600 800 1000 1200 600 150 2 140 200 200-600 8.5x8.5 2*-4-5 see metal. (1) : t j =25 c * = prefered technology mesa delivery form e v base qty 4.42 x 4.42 5.0 x 5.0 6.35 x 6.35 8.5 x 8.8 245 pcs 245 pcs 180 pcs 80 pcs d2 d1 top view gate example : j tm - 30 - 020 - 2 e junction current i t (rms) delivery form metallization mesa scr's (v drm )x1/10 standard scr's 17/21
sensitive scr's v drm i tsm i gt v tm @i tm dv/dt dice types = v rrm r gk =1k w t j =125 c (v) max (1) t p =10ms (a) max (1) (ma) max (1) (v) (a) min at 0.67xv drm t j =125 c (v/ m s) thick. dim. metal. m m typ (mm) d1xd2 i t(rms) :0.8a i drm /i rrm =10 m a max r gk =1k w t j =25 c jtpl01-020 jtpl01-030 jtpl01-040 200 300 400 7 0.2 2 1.6 25 150 0.76x0.76 6 (1) t j =25 c technology planar delivery form aabf max. qty per wafer ? 3o 6370 base unit of delivery 1 wafer example : j tpl 01 - 040 - 6 a junction current i t (rms) delivery form metallization planar sensitive scr's (v drm )x1/10 18/21
v drm i tsm i gt v tm @i tm dv/dt dice types = v rrm t j =125 c (v) max (1) t p =10ms (a) max (1) (ma) max (1) (v) (a) r gk =1k w typ at 0.67xv drm t j =125 c (v/ m s) thick. dim. metal. m m typ. (mm) d1xd2 i t(rms) :2a i drm /i rrm =10 m a max r gk =1k w t j =25 c jttl02-020 jttl02-040 jttl02-060 200 400 600 20 0.2 1.45 2.5 15 210 1.48x1.33 9 i t(rms) :4a i drm /i rrm =20 m a max r gk =1k w t j =25 c jttl04-020 jttl04-040 jttl04-060 200 400 600 30 0.2 1.8 8 15 210 2x1.6 9 (1) t j =25 c technology topglass delivery form aabf max. qty per wafer ? 4o 1.48x1.33 3400 2x1.6 2055 base unit of delivery 1 wafer example : j ttl 02 - 020 - 9 a junction current i t (rms) delivery form metallization topglass sensitive scr's (v drm )x1/10 sensitive scr's 19/21
example : j lo - 03 - 020 - 6 a junction current i t (rms) delivery form metallization planar opto scr's (v drm )x1/10 v drm i tsm h et *v tm @i tm dv/dt dice types = v rrm t j = 125 c (v) max (1) t p =10ms (a) max g a a s source at l = 945 nm (mw/cm 2) typ (1) (v) (a) r gk =1k w min at 0.67xv drm t j =125 c (v/ m s) thick. dim. metal. m m typ. (mm) d1xd2 i t(rms) :3a i drm /i rrm =10 m a max r gk =1k w t j =25 c jlo-03-020 jlo-03-040 200 400 30 70 1.4 3 20 170 1.3x1.3 6 (1) t j =25 c technology planar delivery form aab max. qty per wafer ? 3o 1.3x1.3 2500 base unit of delivery 1 wafer * effective trigger irradiance d2 d1 top view gate opto scr's 20/21
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. 21/21

▲Up To Search▲

Price & Availability of AN858

	To Download AN858 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .